Heterogeneously Integrated GaN on Si Photonic Integrated Circuits

Tech ID: 30118 / UC Case 2019-394-0

Brief Description

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

Background

Many Gallium nitride (GaN) lasers are presently composed of GaN and its alloys and grown on bulk-GaN wafer. However, this current architecture of GaN lasers employs expensive metal packaging and lacks innovation in performance, control, and energy conservation. Additionally, the recyclability of materials can be improved.

Description

Researchers at the University of California, Santa Barbara have found a process that results in new capabilities of GaN lasers. This process involves the heterogeneous integration of GaN lasers on Si photonic integrated circuits. Functionalities of the new process include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability. Additionally, separation of a light output port from a heat-generating InGaN gain section reduces the cost of production because the expensive metal packaging typically used for GaN lasers becomes unnecessary. These new lasers also have the potential to reuse the expensive GaN substrate wafers.

Advantages

  • Surface emission
  • Beam steering
  • Enhanced performance
  • Low waveguide loss
  • Superior reliability
  • Reduced cost
  • Potential to reuse expensive GaN wafers

Applications

  • GaN lasers
  • Semicondunductor power devices
  • Li-Fi
  • LED

Patent Status

Patent Pending

Contact

Learn About UC TechAlerts - Save Searches and receive new technology matches

Inventors

Other Information

Keywords

indfeat, indled, GaN, Lasers, Wafers, Heterogeneous Integration, Integrated Circuits

Categorized As

Additional Technologies by these Inventors