Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
Tech ID: 30118 / UC Case 2019-394-0
A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.
Many gallium nitride (GaN) lasers are composed of GaN and its alloys and grown on bulk-GaN wafers. This architecture of GaN lasers employs expensive metal packaging and lacks innovation in performance, control, and energy conservation. Additionally, the recyclability of materials can be improved.
Researchers at the University of California, Santa Barbara have developed new capabilities of GaN lasers through heterogeneous integration of GaN lasers on Si photonic integrated circuits. Functionalities of the new process include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability. Additionally, separation of a light output port from a heat-generating InGaN gain section reduces the cost of production because the expensive metal packaging typically used for GaN lasers becomes unnecessary. These new lasers also have the potential to reuse the expensive GaN substrate wafers.
- Surface emission
- Beam steering
- Low waveguide loss
- Superior reliability
- Reduced cost
- Potential to reuse expensive GaN wafers
- GaN lasers
- Power electronics
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