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Find technologies available for licensing from UC Santa Barbara.

Bonding of Heterogeneous Material for Improved Yield and Performance of Photonic Integrated Circuits

A new method of photonic integrated circuit fabrication where quantum dot III-V material and silicon waveguides are both grown on silicon substrates and are bonded using the wafer bonding process.

Enhancement Of Thermoelectric Properties Through Polarization Engineering

A novel method of enhancing the thermoelectric properties of materials used in thermoelectric power generation. 

Integration Of Ultra-Low Loss And Active Silicon Waveguide Layers

A new technique for integrating ultra-low loss waveguides (ULLWs) with active silicon photonics.

Method for Making a Metal Layer Semiconductor Laser

A novel method for making a metal layer semiconductor laser with large bandwidth and the capability for high power output.

Hybrid Silicon Integrated Optical Isolator and Circulator

A nonreciprocal ring resonator implemented in a ring isolator, which has the main advantages of miniaturization and integration with other optoelectronic devices. The isolator increases stability and reduces noise in optoelectronic circuits due to a high isolation ratio, which is measured at 9 dB in 1550 nm regime.

Loss Modulated Silicon Evanescent Lasers

Two novel alternative methods for modulating semiconductor lasers that enable much higher frequency modulation.

Fused Vertical Couplers

Wafer fusion is a powerful technique for fabricating structures that cannot be realized by conventional epitaxial growth and processing. Wafer fusion provides an extra degree of freedom in the design and fabrication of 3-D photonic devices. Large switch arrays can be produced by displacing the input and output waveguides vertically in different planes. Compact high-extinction-ratio directional couplers are essential to the switching process.

Semiconductor Hetero-Interface Photodetector

Avalanche photodetectors (APDs) absorb and convert light to an electrical signal and then amplify that electrical signal through avalanche multiplication. Current devices have not achieved the desired efficiencies due to the trade-off between materials with good absorption properties and materials with low-noise avalanching properties. While it is advantageous to use one material to absorb and another to multiply the signal, current technology has limited these devices to only those materials that can be lattice matched.

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