Researchers at UCLA have developed new strategies for fabricating graphene-based transistors, opening a new route to high performance graphene electronics - impacting broadly from highly integrated circuits to ultra sensitive biosensors and a new generation of spintronics and magneto-electronic devices:High-k Oxide Nanoribbons as Dielectrics and Self-aligned Nanowire Gates for High Mobility Field Effect Transistors Conventional fabrication processes often introduce significant defects, severely limiting the performance of graphene Field Effect Transistors (FET). Researchers at UCLA have developed a method that demonstrates the highest carrier mobility to date. Through integrating high-k dielectrics without introducing any appreciable defects into the graphene lattice and eliminating access resistance via a self-alignment process, the approach enables high-performance Graphene Nanoribbon (GNR) transistors (unprecedented transconductance, highest operating frequency) leading to exciting opportunities in high-speed electronics. Very Large Magnetoresistance in Graphene Nanoribbons Field Effect Transistors Electric field control of magnetoresistance has recently attracted considerable attention in multifunctional logic devices. Several material systems have been explored in this regard but only with limited tunability achieved to date. Researchers at UCLA have fabricated graphene FETs, which demonstrate very large magnetoresistance current that is highly tunable with source-drain and gate voltage. The device enables an entirely new material system for multifunctional magnetic sensing and logic devices. Graphene Nanomesh for Large Scale Field Effect Transistors Fabricating a graphene-based semiconducting film that can effectively amplify or switch electronic signals has posed many challenges. In particular, a process for creating dense arrays of GNRs, which is required for electronic devices, has not been achieved. Researchers at UCLA have developed a new graphene nanostructure via standard semiconductor processing methods. The new device, Granphene Nanomesh (GNM), is the first highly uniform, continuous graphene semiconducting thin film. When used as the semiconducting channel of FETs, the GNM based devices deliver large current, nearly 100 times greater than individual GNR devices. Additionally, the simple fabrication technique allows great versatility in controlling the electronic properties.