UCLA researchers in the departments of Chemistry and Materials Science have recently developed a novel material for use in flexible, printed electronics.

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UCLA researchers in the Department of Electrical Engineering have developed a novel gate-induced source tunneling field-effect transistor (GISTFET).

Researchers at UCLA have developed a high-capacity and fast flash memory device through integrating graphene layers with conventional metal-oxide-semiconductor (MOS) technology. The novel device exhibits ultra-low power consumption, making it a promising candidate for terabit flash memory in portable electronic devices.

Researchers at UCLA have developed new strategies for fabricating graphene-based transistors, opening a new route to high performance graphene electronics - impacting broadly from highly integrated circuits to ultra sensitive biosensors and a new generation of spintronics and magneto-electronic devices:High-k Oxide Nanoribbons as Dielectrics and Self-aligned Nanowire Gates for High Mobility Field Effect Transistors Conventional fabrication processes often introduce significant defects, severely limiting the performance of graphene Field Effect Transistors (FET). Researchers at UCLA have developed a method that demonstrates the highest carrier mobility to date. Through integrating high-k dielectrics without introducing any appreciable defects into the graphene lattice and eliminating access resistance via a self-alignment process, the approach enables high-performance Graphene Nanoribbon (GNR) transistors (unprecedented transconductance, highest operating frequency) leading to exciting opportunities in high-speed electronics. Very Large Magnetoresistance in Graphene Nanoribbons Field Effect Transistors Electric field control of magnetoresistance has recently attracted considerable attention in multifunctional logic devices. Several material systems have been explored in this regard but only with limited tunability achieved to date. Researchers at UCLA have fabricated graphene FETs, which demonstrate very large magnetoresistance current that is highly tunable with source-drain and gate voltage. The device enables an entirely new material system for multifunctional magnetic sensing and logic devices. Graphene Nanomesh for Large Scale Field Effect Transistors Fabricating a graphene-based semiconducting film that can effectively amplify or switch electronic signals has posed many challenges. In particular, a process for creating dense arrays of GNRs, which is required for electronic devices, has not been achieved. Researchers at UCLA have developed a new graphene nanostructure via standard semiconductor processing methods. The new device, Granphene Nanomesh (GNM), is the first highly uniform, continuous graphene semiconducting thin film. When used as the semiconducting channel of FETs, the GNM based devices deliver large current, nearly 100 times greater than individual GNR devices. Additionally, the simple fabrication technique allows great versatility in controlling the electronic properties.

UCLA researchers in the Department of Materials Science and Engineering have developed a novel hybrid organic-inorganic solar cell that has a power conversion efficiency of ~10.5%.

Researchers at UCLA have developed a new graphene nanostructure via standard semiconductor processing methods. The new device, Graphene Nanomesh (GNM), is the first highly uniform, continuous semiconducting thin film that opens the pathway to graphene based electronics, impacting broadly from highly integrated circuits to ultra sensitive biosensors and a new generation of spintronics.

UCLA scientists have developed a novel, high-throughput processing technique that produces large sheets of graphene nanofabric. This innovation will enable large scale integration of graphene as a substitute for silicon in electronics.

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Professor Kaner and colleagues at UCLA and Caltech have developed novel electrode structures for use in the storage of ions made with novel nanostructured polymer films. This technology takes advantage of a new class of nanofiber conjugate polymer materials to form amphoteric electrodes that demonstrate improved cycling properties and remarkable application flexibility.  

Professor Grüner and colleagues have developed films of nanostructures that can be integrated into flexible semiconducting substrates. This technology has applications in flexible displays, wearable electronics, intelligent paper, and other lightweight, low-cost electronics. 

UCLA researchers in the Department of Mechanical and Aerospace Engineering have invented a novel method to concentrate nanoparticles (NPs) into metal crystals via zone melting.

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Organic photovoltaic devices provide an opportunity to utilize solar energy efficiently and at low cost. To harvest a greater spectrum of light, scientists have sought to reduce the energy bandgap of the active material. UCLA researchers have developed a novel low-bandgap polymer that provides excellent photovoltaic performance in single junction devices (PCE >7%). This technology has application to organic solar cells, tandem solar cells, transparent solar cells, field-effect transistors, near infrared (NIR) organic photo-detectors, and NIR organic light emitting diodes, among others.

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Prof. Yang and colleagues have developed a novel method of preparing organic-inorganic thin films using a solution process followed by vapor treatment, presenting a low-cost, high-performance solution method of producing optoelectronic devices.

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Researchers at UCLA have developed a simple procedure to fabricate highly flexible silver nanowire (AgNW) electrodes on transparent polymer substrates demonstrating optimum electric properties, shape memory, and providing an alternative to the costly and brittle indium-doped tin oxide (ITO) electrodes

UCLA researchers in the Department of Mechanical and Aerospace Engineering have developed a new method to manufacture and recycle metal matrix nanocomposites.

UCLA researchers in the Department of Electrical Engineering have developed a novel tunable and efficient terahertz (THz) plasmon generation on-chip via graphene monolayers.

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The Duan group at UCLA has developed a high current density vertical field-effect transistor (VFET) that benefits from the strengths of the incorporated layered materials yet addresses the band gap problem found in current graphene technologies.