Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures

Tech ID: 21958 / UC Case 2012-082-0

Brief Description

A variety of techniques to improve the performance of LEDs and laser diodes by embedding photonic crystals or voids into the optoelectronic devices.

Background

A variety of techniques to improve the performance of LEDs and laser diodes by embedding voids into the optoelectronic device structures.

Description

Researchers at the University of California, Santa Barbara have developed a variety of techniques to improve the performance of LEDs and laser diodes by embedding photonic crystals or voids into the optoelectronic devices. The patterns of the structured layers can be random or periodic and arranged in one, two or three dimensions and are ready for final contacting without the need for further growth.

Advantages

  • Fabrication is relatively easy
  • The resulting structures do not require further growth
  • Improved device performance

Applications

  • Fabrication of LEDs and Laser Diodes  

 

This technology is available for licensing.

Patent Status

Patent Pending

Inventors

  • Jewell, Jason
  • Simeonov, Dobri
  • Speck, James S.
  • Weisbuch, Claude C.

Other Information

Categorized As

Related cases

2012-082-0

Keywords

indssl, indphoto, photonic crystal, cenIEE

Contact

Meaghan A. Shaw / shaw@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21958.

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Tel: 805-893-2073 | Fax: 805.893.5236 | shaw@tia.ucsb.edu

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