Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
Tech ID: 21832 / UC Case 2011-073-0
A method for fabricating low cost, large scale, thin film substrates in the III-nitride materials family.
The development of electronic and optoelectronic devices using group III-nitride materials has been hampered by the lack of substrates, in particular GaN substrates, of large size and produced at a low cost. In addition, for some applications, such as LEDs or solar cells, it is useful to have structured substrates to better extract internally generated light (LEDs) or to better absorb incident light (solar cells).
Researchers at the University of California, Santa Barbara have developed a method for fabricating low cost, large scale, thin film substrates in the III-nitride materials family. By using this novel method, it is possible to generate films with any polarity. These films can be used when porosity is a desired feature, such as in light extraction in LEDs or light absorption in solar cells, or can be made to suppress porosity. The films can also be made up of multiple layers to yield a mirror functionality that is useful in vertical cavity surface emitting lasers (VCSELs).
- Low cost
- The substrates can be manufactured in large scale
- Easy detachment of the III-nitride layer from the substrate.
- Electronic and Optoelectronic Devices
This technology is available for licensing. Patent Pending.
|Patent Cooperation Treaty||Reference for National Filings||wo 2012/051618||04/19/2012||2011-073|
- Speck, James S.
- Weisbuch, Claude C.
ADDITIONAL TECHNOLOGIES BY THESE INVENTORS
- Self-Assembled Nano-Cluster And Quantum Dot Lattices
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Improved Manufacturing of Semiconductor Lasers
- High Efficiency LED With Emitters Within Structured Materials
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
- Nitride-Based LED with Optimized Efficiency
- Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
- High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Growth of Planar Semi-Polar Gallium Nitride
- Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Semipolar III-Nitride Laser Diodes with Etched Mirrors
- Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- Low Carrier Loss Device Structure for High Performance Green LEDs
- High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- High Efficiency LED with Optimized Photonic Crystal Extractor
- High Efficiency and High Brightness LEDs for Various Lighting Applications
- Two dimensionally relaxed III-N buffer layers for LEDs
- Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
- Improved LED Performance via Optimized Polarization Properties
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