Exciton Optoelectronic Transistor
Tech ID: 21138 / UC Case 2006-186-0
Technology DescriptionThis invention details experimental proof for an optoelectronic transistor based on the modulation of exciton flux via gate voltage. The exciton optoelectronic transistor (EXOT) implements electronic operation on photons by using excitons as intermediate media; the intensity of light emitted at the optical output is proportional to the intensity of light at the optical input and is controlled electronically by the gate. The results demonstrate a contrast ratio of 30 between an on state and an off state of the EXOT and its operation at speeds greater than 1 GHz. Studies also demonstrate high-speed control of both the flux and the potential energy of excitons on a time scale much shorter than the exciton lifetime.
ApplicationsAs the communications industry continues its shift into optically based systems, the demand for devices that have the capability to process optical signals in an efficient and expedient manner is steadily increasing. The development of optically based devices that can perform all necessary logic operations (i.e., switching, AND/OR operations) in a simple and compact manner are vital to increasing the speed of information processing.
One of the critical devices of electronic logic is the transistor—a three-terminal device with the current through two terminals controlled by the third terminal. There are many proposals for optoelectronic and all-optical transistors, and the modulation of optical signals has been demonstrated by a variety of methods. Development of semiconductor-based optical transistors attracts a particular interest due to the opportunity to create scalable optoelectronic circuits integrated in a chip.
Intellectual Property InfoThis invention is patent pending with commercial rights available.
|United States Of America||Issued Patent||7,825,402||11/02/2010||2006-186|
PEOPLE WHO VIEWED THIS ALSO VIEWED THESE TECHNOLOGIES BY OTHER INVENTORS
- All Optical Inverter, Logic and Memory Circuits based on Vertical Cavity Semiconductor Optical Amplifier-like Devices
- Method of Transferring a Ultra-Thin Layer of Crystalline Material with High Crystalline Quality
- Telephoto Contact Lens: Wearable Binoculars
- Nanophotonic Graphene Transistor
- Novel, Low-Cost Method For Fabrication Of Nanostructured Materials