UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

Improved growth technique that permits the fabrication of high-quality, low-defect density aluminum nitride semiconductor films that are relatively dislocation free.   

Background

The growth of aluminum nitrides has been pursued by a variety of techniques, but the unavailability of bulk crystals or lattice-matched substrates has resulted in heteroepitaxial films of poor quality possessing relatively high structural defect densities.     

Description

Researchers at the University of California, Santa Barbara have solved this problem by developing a lateral epitaxial growth technique that permits the fabrication of high-quality, low-defect density aluminum nitride semiconductor films that are relatively dislocation free.   

Advantages

• Enables the production of readily available, inexpensive, high-quality substrate materials for nitride semiconductors.
• Improved optoelectronic and electronic device performances

Applications

• Optoelectronic devices
• High-power, high-frequency electronic devices
• AlN and AlGaN wafers    

 

This technology is available for licensing on a non-exclusive basis.

PATENT STATUS

• Patent Pending; U.S. Patent Application 20100065854 published on 18 Mar, 2010

INVENTORS

• Kamber, Derrick S.
• Nakamura, Shuji
• Speck, James S.

Other Information

Contact

Franco Caporale/ caporale@tia.ucsb.edu / tel: 805-893-2073. Please reference Tech ID #19167.