Size-Independent Forward Voltage Micro-LED with an Epitaxial Junction

Tech ID: 32268 / UC Case 2020-714-0

Background

Conventional tunnel junction micro-LEDs currently face challenges of higher voltage penalties and varied voltage with different device sizes. Unfortunately, size-dependent voltage characteristics limit the applications of micro-LEDs and result in a lack of device reliability. Thus, overcoming the size dependence of the forward voltage in tunnel junction micro-LEDs would increase their potential to meet the demands of next-generation display applications. 

Description

Researchers at the University of California, Santa Barbara have fabricated size-independent low forward voltage micro-LEDs with an epitaxial tunnel junction (TJ) comprised of p+GaN and n+GaN layers. Utilizing selective area growth (SAG) for regular and micro-size InGaN LEDs, the optimized devices exhibit a very small voltage penalty of 0.2-0.3 V compared to conventional indium tin oxide contact LEDs. Therefore, this composition solves the issue of forward voltage variation in different size tunnel junction micro-LEDs by realizing a size-independent low forward voltage device. 

Advantages

  • Size-independent forward voltage
  • Increases reliability of micro-LEDs in expanded applications

Applications

  • Micro-LEDs

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Published Application WO2021207454 10/14/2021 2020-714
 

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Keywords

micro-LED, epitaxial tunnel junction, n+GaN, p+GaN, forward voltage

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