Device Structures Utilizing Barrier Enhancement Conductive Materials on N-polar III-N
Tech ID: 31969 / UC Case 2020-710-0
Current methods for improving the high-frequency and high-power performance in N-polar GaN HEMTs struggle to preserve a desirable aspect ratio while using a small gate length. While gate dielectrics can be removed by depositing conductive materials directly on N-polar GaN, the barrier height values are less than the difference between the work function of the conductive material and the electron affinity of GaN. Therefore, devices with limited barrier height values cause high leakage and impede applications in diodes or transistors.
Researchers at the University of California, Santa Barbara have developed a device with barrier enhancement conductive materials on N-polar III-N materials that can overcome the limited barrier height value and reduce leakage. N-polar III-N device performance is improved by using barrier materials with Schottky barriers greater than or equal to the ideal Schottky barrier height. In addition to the device’s application to N-polar GaN Schottky diodes and HEMTs, it can also be used on other diodes and transistors that require contact between conductive materials and N-polar III-N materials.
- Improves device performance
- Overcomes non-ideal Schottky barriers
- Reduces leakage
- Power Electronics
- RF Electronics