Selective-Area Mesoporous Semiconductors And Devices For Optoelectronic And Photonic Applications

Nanoporous technology is highly applicable to optoelectronics and photonics. It is, however, limited by optical confinement in semiconductor layers due to the reduction of the semiconductor refractive index via the introduction of air-voids in mesoporous material.  Additionally, typical nanoporous technologies are architecturally limited to planar structures by MOCVD growth and doping techniques.

Researchers at the University of California, Santa Barbara have embodied various geometries to allow selective-area mesoporous semiconductor architectures for optics, optoelectronics and photonics applications.  Applications include optical grating and optical filters, geometry confined Tamm plasmon lasers, monolithic RGVY displays, lateral cavities, ring DBRs and photonic doping.  This technology also allows damage-free selective-area etching and can be used to remove the dry etch-induced damage in electronic and optoelectronic applications.