Low Band Gap Graphene Nanoribbon Electronic Devices

Tech ID: 30358 / UC Case 2019-145-0

Patent Status

Patent Pending

Brief Description

This invention creates a new graphene nanoribbons (GNR)-based transistor technology capable of pushing past currently projected limits in the operation of digital electronics for combining high current (i.e. high speed) with low-power and high on/off ratio. The inventors describe the design and synthesis of molecular precursors for low band gap armchair graphene nanoribbons (AGNRs) featuring a width of N=11 and N=15 carbon atoms, their growth into AGNRs, and their integration into functional electronic devices (e.g. transistors). N is the number of carbon atoms counted in a chain across the width and perpendicular to the long axis of the ribbon.

Suggested uses

The long-term potential of this technology is to create a new GNR-based transistor technology capable of pushing past currently projected limits for combining high current (i.e. high speed) with low-power and high on/off ratio in the operation of digital electronics. These GNR nanostructures have great promise in this regard since they exhibit uniform, homogeneous, and ultra-narrow ribbon width, atomically smooth edges, and uniform bandgap. They are anticipated to exhibit excellent electron transport characteristics and are therefore potentially ideal for use as the channel material in post-silicon complementary metal-oxide-semiconductor (CMOS) transistors, enabling the ultimate scaling of high performance digital electronics. Further, GNR 1D heterostructures have recently been grown, in which the ribbon width (hence bandgap) is varied along the length of the ribbon, opening up possibilities for novel tunneling devices with super-steep subthreshold slope for ultra-low voltage operation.

Advantages

These GNR nanostructures exhibit uniform, homogeneous, and ultra-narrow ribbon width, atomically smooth edges, and uniform bandgap. They are anticipated to exhibit excellent electron transport characteristics and are therefore potentially ideal for use as the channel material in post-silicon CMOS transistors, enabling the ultimate scaling of high performance digital electronics.

Related Materials

Contact

Learn About UC TechAlerts - Save Searches and receive new technology matches

Inventors

  • Fischer, Felix Raoul

Other Information

Categorized As

Additional Technologies by these Inventors