|United States Of America||Published Application||20220282029||09/08/2022||2019-145|
This invention creates a new graphene nanoribbons (GNR)-based transistor technology capable of pushing past currently projected limits in the operation of digital electronics for combining high current (i.e. high speed) with low-power and high on/off ratio. The inventors describe the design and synthesis of molecular precursors for low band gap armchair graphene nanoribbons (AGNRs) featuring a width of N=11 and N=15 carbon atoms, their growth into AGNRs, and their integration into functional electronic devices (e.g. transistors). N is the number of carbon atoms counted in a chain across the width and perpendicular to the long axis of the ribbon.
These GNR nanostructures exhibit uniform, homogeneous, and ultra-narrow ribbon width, atomically smooth edges, and uniform bandgap. They are anticipated to exhibit excellent electron transport characteristics and are therefore potentially ideal for use as the channel material in post-silicon CMOS transistors, enabling the ultimate scaling of high performance digital electronics.