UCLA researchers in the Department of Electrical Engineering have developed a novel gate-induced source tunneling field-effect transistor (GISTFET).
The field-effect transistor (FET) is a transistor that uses an electric field to regulate the electrical conductivity of a channel in a semiconductor. FETs have many varieties, such as the metal-oxide-semiconductor FET (MOSFET) and the junction FET (JFET), yet they all have high input impedance. These properties and others make them critical components of modern electronics, including microprocessors. However, the use of drift-diffusion current over an electrostatic barrier limits their ability to consume less power, making them incompatible with ultra-low power electronics. Tunneling FETs (TFETs) have been proposed to alleviate these issues. However, the fact that the current through the TFET is smaller than the current through the MOSFET has been an issue in practical application of the TFET. Additionally, manufacturing has large reproducibility and variability issues, largely caused by the necessity for heavy chemical doping. The development of a novel TFET that handle larger current without the need for chemical doping would remove manufacturing and performance issues.
Prof. Chi On Chui and colleagues at UCLA have developed a novel gate-induced source tunneling field-effect transistor (GISTFET). This innovation allows for use of high currents and steep subthreshold swing (SS) that are achievable without the need for chemical doping, alleviating the associated performance and manufacturing issues. This is achieved through a novel tunneling mode that is independent of chemical doping allowing for maximal TFET performance. Moreover, the GISTFET can operate at substantially lower power and voltage making them ideal for ultra-low power electronics. The GISTFET makes it simpler to fabricate N-type and P-type transistors with symmetric operating characteristics, enabling complementary logic circuits.
GISTFETs could be utilized in building a variety of electronic components in a variety of devices including:
• Microprocessors/Integrated Circuits
• Wireless technologies such as:
• Internet-of-Things (IoT) devices and systems
• Autonomous vehicle components
• Low power and ultra-low power electronics
• Radio frequency amplifiers
• Switch mode power supplies
• GISTFET can operate with low power and voltage making them ideal for ultra-low power electronics
• Manufactured without chemical doping therefore maximizing performance and alleviating production issues
• High currents and steep subthreshold swing (SS) that are achievable without the need for chemical doping
The GISTFET is in the conceptual stage of development and has been validated by numerical quantum mechanical calculations based on the non-equilibrium Green’s function (NEGF) formalism.
Field-effect transistor, FET, MOSFET, metal-oxide-semiconductor field-effect transistor, JFET, junction field-effect transistor, junction-gate field-effect transistor, GISTFET, gate-induced source tunneling field-effect transistor, tunneling FET, tunnelin