Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates

Tech ID: 25605 / UC Case 2009-429-0

Brief Description

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2.

Background

The usefulness of gallium nitride (GaN) and its alloys of (Ga,Al,In,B)N has been well established in the fields of visible and ultraviolet optoelectronic devices and high power electronic devices. Most of these thin films, heterostructures and devices are grown along the c-direction, which can lead to polarization discontinuities that are formed at the surface level. The growth direction coincides with the alignment of these polarization fields. One approach to decreasing the polarization effects and improving surface smoothness is to grow the devices on nonpolar or semipolar planes of the crystal.

Description

Researchers at the University of California, Santa Barbara have developed a method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates that uses an inert carrier gas such as N2. These smooth (Ga,Al,In,B)N thin films can be used in the growth of high performance nonpolar or semipolar nitride LEDs and LDs. Improved surface morphology can lead to a number of advantages for nonpolar or semipolar nitride device manufacturers, including, but not limited to, better uniformity in thickness, composition, doping, electrical properties, and luminescence characteristics of individual layers in a given device.

Advantages

  • Improved device performance
  • Reductions in polarization-induced electric fields and effective hole mass

Applications

  • LEDs
  • Laser diodes (LDs)

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,795,430 08/05/2014 2009-429
 

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Keywords

indled, GaN, polarization, nonpolar, semipolar, indfeat

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