High Light Extraction Efficiency III-Nitride LED

Tech ID: 25553 / UC Case 2008-277-0

Brief Description

A III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED.

Background

While the advent of high-quality freestanding GaN substrates has led to the development of high-performance nonpolar and semipolar LEDs, there is plenty of room for improving the light extraction efficiency. The lack of means for surface roughening has become a major hurdle for nonpolar and semipolar LEDs to achieve higher extraction efficiency and hence higher overall efficiency, and therefore improved roughening techniques are needed to address this issue.

Description

Researchers at the University of California, Santa Barbara have developed a III-nitride light emitting diode (LED) with increased light extraction from having at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED. The texturing may be performed by plasma-assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Advantages

  • Increased light extraction efficiency and output power
  • More straightforward than other light extraction enhancement techniques (such as using a photonic crystal)
  • Applicable to all nitride semiconductor surfaces regardless of crystal structure

Applications

  • LEDs

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 9,040,326 05/26/2015 2008-277
United States Of America Issued Patent 8,835,200 09/16/2014 2008-277
United States Of America Issued Patent 8,114,698 02/14/2012 2008-277
 

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Keywords

indssl, indled, LED, III-nitride

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