Conductor-Semiconductor Composite Films and Their Applications for High Performance Transistors
Tech ID: 24566 / UC Case 2012-298-0
Professor Duan and colleagues have devised a conducting-semiconducting composite material for increasing the performance of nanofilm transistors without using sophisticated lithography. High performance electronic components such as transistors are crucial building blocks for many broad range consumer electronics such as integrated circuits. The speed of a transistor relies on both the mobility of a given material as well as the channel length--the distance between the source and drain electrode--of an integrated circuit. Recent developments in semi-conducting nanowire thin film transistors allows for the improvement of mobility, but reducing the channel length of these nanowire devices is costly and complicated. Researchers at UCLA decreased the effective channel length from microns to nanometers by utilizing a conducting-semiconducing ink to form thin film transistors. The conducting material acts as a short cut for the electrical current that flows between the source and drain electrodes. The method offers overall increased device performance, solution processing of a multitude of organic and inorganic semiconducting materials, and eliminates costly and complicated lithography steps to increase transistor performance. The technology has wide applications for consumer electronics and thin film displays.