Techniques for fabricating long-wavelength AlGaN-cladding-free laser diodes employing semipolar (20-21)-plane InGaN/GaN-based active region.
Conventional solid-state lighting systems use a III-nitride light emitting diode (LED) that emits blue light to excite a phosphor that emits yellow light. Although LEDs show promise for solid state lighting applications, they nevertheless suffer from efficiency droop at high injection levels. Laser diodes are a suitable replacement for generating blue light in solid state lighting systems, since they do not experience the same droop effects.
This invention describes techniques for fabricating long-wavelength AlGaN-cladding-free laser diodes employing semipolar (20-21)-plane InGaN/GaN-based active region. The invention features novel structure and epitaxial growth techniques to improve structural, electrical and optical properties of long wavelength laser diodes, especially in green spectral range.
|United States Of America||Issued Patent||8,761,218||06/24/2014||2010-544|
indled, lighting, laser diode, indssl, solid state lighting, cenIEE