High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes

Tech ID: 24293 / UC Case 2010-544-0

Brief Description

Techniques for fabricating long-wavelength AlGaN-cladding-free laser diodes employing semipolar (20-21)-plane InGaN/GaN-based active region. 

Background

Conventional solid-state lighting systems use a III-nitride light emitting diode (LED) that emits blue light to excite a phosphor that emits yellow light. Although LEDs show promise for solid state lighting applications, they nevertheless suffer from efficiency droop at high injection levels. Laser diodes are a suitable replacement for generating blue light in solid state lighting systems, since they do not experience the same droop effects.

Description

This invention describes techniques for fabricating long-wavelength AlGaN-cladding-free laser diodes employing semipolar (20-21)-plane InGaN/GaN-based active region. The invention features novel structure and epitaxial growth techniques to improve structural, electrical and optical properties of long wavelength laser diodes, especially in green spectral range.

Advantages

  • Suitable for mass production (AlGaN-cladding-free)
  • Achieves (20-21)-plane green laser diode

Applications

  • Laser diode and LED lighting

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,761,218 06/24/2014 2010-544
 

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Keywords

indled, lighting, laser diode, indssl, solid state lighting, cenIEE

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