Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
Tech ID: 24138 / UC Case 2011-579-0
A new method to improve performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates to prevent lattice plane slip.
The usefulness of group-III nitrides such as gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Given recent trends in industry standards, it is desirable to produce ultra-bright LEDs and LDs in the green regions, including colors such as green, amber, and red. The problem with producing LEDs and LDs in the green regions by epitaxy is due to the complications in producing high quality, thick, and high in composition crystals. During growth, the lattice planes of the crystals slip, causing additional threading dislocations which will result in misfit dislocations that degrade the performance of the device.
Researchers at the University of California, Santa Barbara have developed a new method to improve performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates to prevent lattice plane slip. This new process uses silicon doping to create a new relaxed buffer layer with limited thread dislocations. This new buffer layer reduces the strain during subsequent growth of III-nitride alloy layers. By reducing this strain on the layers using this process, lattice plane slip is prevented, new thread dislocations are prevented, and overall defect density is reduced allowing for higher performance for ultra-bright LEDs, LDs, and high powered electronic devices.
- Reduced strain on device layers
- Reduced thread and misfit dislocations
- High thickness/composition group-III nitride stacking
- Reduced complications of lattice mismatch
- Improved device performance
- UV and Green Region LEDs and LDs
- Group-III Nitride Materials
- Optoelectronics and Electronic Devices
|United States Of America