Graphene Flash Memory Device

Tech ID: 22141 / UC Case 2011-041-0


Researchers at UCLA have developed a high-capacity and fast flash memory device through integrating graphene layers with conventional metal-oxide-semiconductor (MOS) technology. The novel device exhibits ultra-low power consumption, making it a promising candidate for terabit flash memory in portable electronic devices.


The increasing market demand for smaller and faster electronics has so far been meet by reducing transistor sizes. However, the trend will soon reach its physical limits. One solution is to incorporate new material such as graphene with silicon-based electronics. Due to its superb properties, graphene has received enormous attention for potential applications. However, practical graphene devices, which can be integrated into state-of-the-art technology, have not been demonstrated.


Researchers at UCLA have reported a breakthrough application for graphene: the Graphene Flash Memory. Through growing large-area graphene sheets by a simple chemical vapor deposition process and incorporating them into a floating gate MOSFET, an All Graphene Flash Memory (AGFM) has been demonstrated. The device exhibits low power consumption and more data per unit area, making AGFM a promising candidate for terabit flash memory. This, in turn, will lead to larger storage capacity and longer battery life in portable electronic devices.


High speed and ultra low power Flash memory for electronics


  • Large memory capacity
  • Ultra-low power consumption
  • Compatible with state-of-the-art technology
  • Strong immunity to short channel effects

State Of Development

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,772,853 07/08/2014 2011-041


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  • Wang, Kang L.

Other Information


Graphene, Flash memory, Chemical Vapor Deposition (CVD), MOSFET, Short channel effect (SCE)

Categorized As