This technology is currently not available for licensing
Tech ID: 21802
Additional Technologies by these Inventors
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation
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- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Ultraviolet Laser Diode on Nano-Porous AlGaN template
- Improved Reliability & Enhanced Performance of III-Nitride Tunnel Junction Optoelectronic Devices
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Thermally Stable, Laser-Driven White Lighting Device
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Contact Architectures for Tunnel Junction Devices
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
- Novel Multilayer Structure for High-Efficiency UV and Far-UV Light-Emitting Devices
- A Method To Lift-Off Nitride Materials With Electrochemical Etch
- High-Intensity Solid State White Laser Diode
- Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
- High-Efficiency and High-Power III-Nitride Devices Grown on or Above a Strain Relaxed Template
- III-Nitride Based VCSEL with Curved Mirror on P-Side of the Aperture
