Scientists at UCLA have developed a composition of dielectric organic and inorganic materials that exhibit bistable electrical states and can be used in advanced electronic data storage and switching devices manufactured through low cost methods.

The vast majority of electronic memory and switching devices are presently made from inorganic materials such as crystalline silicon. Although these devices have been technically and commercially successful, they have a number of drawbacks, including complex architecture and high fabrication costs. The incorporation of organic and polymeric materials can address some of these drawbacks, and allow for advanced functionality to be built into these devices, such as flexibility and transparency.

Researchers at UCLA have developed a new series of composite materials that can be used as non-volatile electronic memory devices that exhibit bistable behavior. In general, the materials are composed of a dielectric matrix material containing an organic polymer and/or an inorganic oxide, collectively which acts as an electron donor and an electron acceptor. Electronic memory and switching devices manufactured from these films can be produced more easily and inexpensively and have reduced power and thermal requirements enabling stacking in various configurations to fabricate electronic devices of higher density.

Categorized As

• Materials & Chemicals
  • Composites

Related cases

2003-194-0

Keywords

computer hardware, devices, electrical, materials, memory device, non-volatile, bistable, dielectric, organic, polymer