Summary

Researchers at UCLA have developed a bipolar transistor structure that overcomes the traditional scaling limitations of current, state of the art bipolar transistors due to an innovative manufacturing process that is cheaper and simpler to produce than vertical current transistor structures.

Background

Current, state of the art bipolar transistors are processed with self-aligned, double polysilicon, trench-isolated layers, which have not changed the device geometry or the placement of electrodes and subsequently prevented the scaling and ultimately limited the minimum size of these devices.

Innovation

Researchers at UCLA have developed a bipolar transistor structure, called a Horizontal Current Bipolar Transistor (HCBT), for use in integrated circuits where the active device is processed on the sidewall of an n-doped portion so that the surface footprint does not depend on the desired area of the active device region.

Applications

• Bipolar transistor structure for use in integrated circuits

Advantages

• Overcomes some traditional bipolar transistor disadvantages
• Lower cost and simpler fabrication
• Only requires a single polysilicon layer, and eliminates the need for epitaxial processes and trench isolation
• Reduced number of photolithography steps (5 masks to one metal, compared to 6-8 needed for vertical current devices)
• Improved high frequency characteristics

State of Development

HCBT structure demonstrated and patented.

Patent Status

Inventors

• Wang, Kang-Lung L.

Contact

Ben Chu / bchu@research.ucla.edu / tel: View Phone Number. Please reference Tech ID #20539.

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Other Information

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• Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
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