UNIVERSITY of CALIFORNIA, SANTA BARBARA

The UCSB Office of Technology & Industry Alliances (TIA) builds a foundation for long-term, productive and mutually-beneficial relationships between UCSB and its industry collaborators through its integrated management of both intellectual property licensing and research agreements.

Injection Lasers Fabricated From Semiconducting Polymers

Tech ID: 10269 / UC Case 2003-318-0

BACKGROUND


Light-emissive polymers are outstanding laser materials because they are intrinsically "4-level" systems. Their luminescence efficiencies exceed 60%, even in undiluted films, they emit at colors in the full range of the visible spectrum, and they can be processed into optical quality films by spin casting. In recent years, remarkable progress has been made in implementing semiconducting polymer materials into different resonant structures for optically pumped lasers. Neat films with emission wavelengths ranging over the entire visible spectrum and high photo-luminescence illustrate the importance of this class of luminescent semiconducting polymers as gain media. Placing a thin film as the active material between two electrodes in a vertical cavity laser configuration offers one approach to injection lasers. However, electrically pumped laser emission has not yet been demonstrated due to the additional losses introduced by the metal electrodes and charge induced absorption.


DESCRIPTION

Scientists at the University of California have developed a novel method to overcome the difficulties associated with the additional losses caused by the metal electrodes and charge induced absorption. A new architecture, called a light-emitting field effect transistor (LEFET) configuration, combines with injection-induced amplification of the "cut-off mode" to achieve gain narrowing and lasing.


APPLICATIONS

This new UC invention has applications in fabricating organic injection lasers.


ADVANTAGES

The new UC technology provides the following benefits:

  • significantly reduces charge induced absorption losses;
  • minimizes electrode interference with the guided wave.

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 6,828,583 12/07/2004 2003-318
 

Inventors

  • Edman, Ludvig
  • Heeger, Alan J.
  • Moses, Daniel
  • Pauchard, Marc
  • Vehse, Martin

Other Information

Categorized As

Related cases

2003-318-0

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #10269.

TIAOffice of Technology & Industry Alliances, University of California, Santa Barbara342 Lagoon Road, , Santa Barbara, CA 93106-2055 | www.tia.ucsb.edu
Tel: 805.893.2073 | Fax: 805.893.5236 | juncal@tia.ucsb.edu

© 2009 - 2010, The Regents of the University of California, All Rights Reserved

Terms of use