Self-Assembled Nano-Cluster And Quantum Dot Lattices

Tech ID: 10206 / UC Case 2000-483-0

BACKGROUND

Self-assembled quantum dots (QDs) have been the subject of great interest in recent years due to their attractive electronic and optical properties. QD structures and their applications, such as lasers detectors, and memories have demonstrated several unique physical properties. The self-assembled growth of the QDs relies upon strain-induced island formation by the Stranski-Krastanow growth mode. However, efforts to understand and control island formation, ordering, and positioning are still limited. This lack of control of island formation, particularly with regard to island positions, presents a significant obstacle to the incorporation of QDs into novel devices.

DESCRIPTION

Scientists at the University of California have developed a method of controlling island nucleation in self-assembled quantum dots. By using a technique that combines lithography with self-assembly, island nucleation can be restricted to mesoscopic areas of the wafer surface.

APPLICATIONS

This new invention has many applications, including:

  • Molecular beam epitaxy;
  • Metalorganic chemical vapor deposition;
  • Semiconductor systems, such as SiGe, GaAl, anf GaN;
  • Metal semiconductor systems, such as Fe/GaAs and Co/GaAs;
  • Metal-metal systems.

ADVANTAGES

The new UC technology provides the following benefits:

  • Can be used with a 2-D or 3-D lattice;
  • Works with other crystal orientations;
  • Can be used as an all in situ technique after patterning.

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 6,583,436 06/24/2003 2000-483
 

Inventors

  • Johnson, Jo Anna
  • Lee, Hao
  • Petroff, Pierre M.
  • Speck, James S.

Other Information

Categorized As

Related cases

2000-483-0

Keywords

quantum dots

Contact

Bernadette McCafferty / mccafferty@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #10206.

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