UNIVERSITY of CALIFORNIA, SANTA BARBARA

BACKGROUND

Self-assembled quantum dots (QDs) have been the subject of great interest in recent years due to their attractive electronic and optical properties. QD structures and their applications, such as lasers detectors, and memories have demonstrated several unique physical properties. The self-assembled growth of the QDs relies upon strain-induced island formation by the Stranski-Krastanow growth mode. However, efforts to understand and control island formation, ordering, and positioning are still limited. This lack of control of island formation, particularly with regard to island positions, presents a significant obstacle to the incorporation of QDs into novel devices.

DESCRIPTION

Scientists at the University of California have developed a method of controlling island nucleation in self-assembled quantum dots. By using a technique that combines lithography with self-assembly, island nucleation can be restricted to mesoscopic areas of the wafer surface.

APPLICATIONS

This new invention has many applications, including:

• Molecular beam epitaxy;
• Metalorganic chemical vapor deposition;
• Semiconductor systems, such as SiGe, GaAl, anf GaN;
• Metal semiconductor systems, such as Fe/GaAs and Co/GaAs;
• Metal-metal systems.

ADVANTAGES

The new UC technology provides the following benefits:

• Can be used with a 2-D or 3-D lattice;
• Works with other crystal orientations;
• Can be used as an all in situ technique after patterning.

Patent Status

Country	Type	Number	Dated	Case
United States Of America	Issued Patent	6,583,436	06/24/2003	2000-483

Inventors

• Johnson, Jo Anna
• Lee, Hao
• Petroff, Pierre M.
• Speck, James S.

Other Information

Contact

Bernadette McCafferty / mccafferty@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #10206.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Quantum Dot Fabrication Process
• Quantum Dot Infrared Detector And Ultrahigh Resolution Imaging Device
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• Improved LED Performance via Optimized Polarization Properties

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