Zeolite Molecular Sieve Thin Films As Low-K Dielectrics
Tech ID: 10131 / UC Case 1999-179-0
BACKGROUND
The next generation of integrated circuits (ICs), with feature size smaller than
0.25 micron, will require inter-metal dielectrics with k less than 3. Current commercially available
dielectric materials, such as spin-on glasses and fluorinated SiO2 (k>3) are inadequate. Organic
polymers and inorganic nonporous silica have been investigated as potential alternative materials.
However, both present several drawbacks. Although organic polymers can have a k between 2 and
3, they display low thermal stability and poor heat conductivity. In addition, the low mechanical
strength of polymeric materials can lead to problems in the chemical and mechanical polishing
(CMP) process. Generating porosity inside of inorganic materials, such as nanoporous silica, has
proven to be a popular method for reducing the k of these materials. However, present formulations
have only demonstrated a dielectric constant of approximately 2. Also, the extremely high porosity
of nanoporous silica leads to poor heat conductivity, low mechanical strength, and low resistance to
electrical breakdown. Further concerns with this material include the necessity of surface
treatments to avoid moisture adsorption and its significant shrinkage during drying, which creates
problems for metal gap filling.
DESCRIPTION
Scientists at the University of California have developed an novel method for using zeolite molecular sieves and low-k dielectrics as well as techniques for the design and synthesis of thin films of these materials for use as inter-metal dielectrics in ICs.ADVANTAGES
The new UC technology provides the following benefits:- Pure silica zeolites demonstrate higher chemical, thermal, and mechanical stability, and lower k than sol-gel silica and surfactant templated mesoporous silica;
- Hydrophobic properties help to mitigate water adsorption problems;
- Method is easily incorporated into existing semiconductor manufacturing processes;
- Allows production of zeolite films with designed properties.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 6,573,131 | 06/03/2003 | 1999-179 |
Other Information
Categorized As
Related cases
1999-179-0
Contact
Christopher DelVecchio / christopher.delvecchio@ucr.edu / tel: View Phone Number. Please reference Tech ID #10131.