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Implantable Light Irradiation Device For Photodynamic Therapy
Ultraviolet Laser Diode on Nano-Porous AlGaN template
III-Nitride-Based Vertical Cavity Surface Emitting Laser (VCSEL) with a Dielectric P-Side Lens
Novel Multilayer Structure for High-Efficiency UV and Far-UV Light-Emitting Devices
High-Efficiency and High-Power III-Nitride Devices Grown on or Above a Strain Relaxed Template
Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation
III-Nitride-Based Devices Grown On Thin Template On Thermally Decomposed Material
Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
III-Nitride Based VCSEL with Curved Mirror on P-Side of the Aperture
III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
Methods for Fabricating III-Nitride Tunnel Junction Devices
Tunnel Junction Devices with Optically-Pumped III-Nitride Layers
Contact Architectures for Tunnel Junction Devices
Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
Improved Anisotropic Strain Control in Semipolar Nitride Devices
Aluminum-cladding-free Nonpolar III-Nitride LEDs and LDs
Tunable White Light Based on Polarization-Sensitive LEDs
High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
Transparent Mirrorless (TML) LEDs
High-Intensity Solid State White Laser Diode
Method for Enhancing Growth of Semipolar Nitride Devices
Growth of High-Performance M-plane GaN Optical Devices
Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
Low-Droop LED Structure on GaN Semi-polar Substrates
UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
Method for Increasing GaN Substrate Area in Nitride Devices
Nonpolar III-Nitride LEDs With Long Wavelength Emission
Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
Improved GaN Substrates Prepared with Ammonothermal Growth
Growth of Semipolar III-V Nitride Films with Lower Defect Density
Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
III-V Nitride Device Structures on Patterned Substrates
LED Device Structures with Minimized Light Re-Absorption
Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
Controlled Photoelectrochemical (PEC) Etching by Modification of Local Electrochemical Potential of Semiconductor Structure
Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
Low Temperature Deposition of Magnesium Doped Nitride Films
Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
Growth of Planar Semi-Polar Gallium Nitride
Method for Growing High-Quality Group III-Nitride Crystals
Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
GaN-Based Thermoelectric Device for Micro-Power Generation
Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN