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High Pressure, Laser Floating Zone Crystal Growth Furnace

A furnace that allows for the growth of crystalline material under applied gas pressures of up to 1000atm.

Control Of Photoelectrochemical Etch Parameters For Minimization of Interfacial Roughness of Light Emitting Device Structures

A way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates.

Transparent Vertical Cavity Surface Emitting Laser for Augmented and Mixed Reality Displays

Using vertical cavity surface emitting lasers as an alternative for transparent displays in augmented and mixed reality applications.

Enhancement of Semi-Polar Gallium Nitride Surface Morphology in Photo-Electrochemical Undercut Etching

An etching technique that utilizes photo-generated holes to permit the electrochemical etching of a material, such as III-nitride, by achieving smooth etched n-type semipolar GaN surfaces. Normal 0 false false false EN-US X-NONE X-NONE /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Times New Roman",serif;}

Fabrication of Relaxed Semiconductor Films without Crystal Defects

A technique for making relaxed InGaN layers without crystal defects.

Heterogeneously Integrated GaN on Si Photonic Integrated Circuits

A process that results in new capabilities of GaN lasers. Functionalities include surface emission, beam steering, enhanced performance, low waveguide loss, and superior reliability.

Contact to III-Nitride Tunnel Junction Devices Using Narrow Current Spreading Layer and Current Blocking Layer

A structure for improving the performance of III-nitride light-emitting devices.

Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.