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Improved Anisotropic Strain Control in Semipolar Nitride Devices
Aluminum-cladding-free Nonpolar III-Nitride LEDs and LDs
Tunable White Light Based on Polarization-Sensitive LEDs
High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
Transparent Mirrorless (TML) LEDs
High-Intensity Solid State White Laser Diode
Method for Enhancing Growth of Semipolar Nitride Devices
Growth of High-Performance M-plane GaN Optical Devices
Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
Low-Droop LED Structure on GaN Semi-polar Substrates
UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
GaN-based Vertical Metal Oxide Semiconductor and Junction Field Effect Transistors
Method for Increasing GaN Substrate Area in Nitride Devices
Nonpolar III-Nitride LEDs With Long Wavelength Emission
Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
Defect Reduction in GaN films using in-situ SiNx Nanomask
Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
Thermally Stable, Laser-Driven White Lighting Device
Growth of Semipolar III-V Nitride Films with Lower Defect Density
Improved GaN Substrates Prepared with Ammonothermal Growth
Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
High-Quality N-Face GaN, InN, AlN by MOCVD
III-V Nitride Device Structures on Patterned Substrates
Oxyfluoride Phosphors for Use in White Light LEDs
Cerium Based Phosphor Materials for Improved Light Quality in LEDs
(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
LED Device Structures with Minimized Light Re-Absorption
Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
Controlled Photoelectrochemical (PEC) Etching by Modification of Local Electrochemical Potential of Semiconductor Structure
Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen
Low Temperature Deposition of Magnesium Doped Nitride Films
Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
Growth of Planar Semi-Polar Gallium Nitride
Method for Growing High-Quality Group III-Nitride Crystals
Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers