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Method for Increasing GaN Substrate Area in Nitride Devices
Growth of Semipolar III-V Nitride Films with Lower Defect Density
Improved GaN Substrates Prepared with Ammonothermal Growth
High-Quality N-Face GaN, InN, AlN by MOCVD
Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen
Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
Growth of Planar Semi-Polar Gallium Nitride
Method for Growing High-Quality Group III-Nitride Crystals