Quantum Dot DFB Lasers, DBR Lasers, and Photonic Integrated Circuits

Tech ID: 32598 / UC Case 2022-759-0


GaAs-based indium arsenide (InAs) or indium gallium arsenide (InGaAs) quantum dot (QD) laser diodes have demonstrated favorable performance by way of low threshold current density, high wall-plug efficiency (WPE), and high characteristic temperature — all of which give QD lasers a significant advantage over their indium phosphide (InP) quantum well (QW) counterparts. Nevertheless, QD lasers have only demonstrated high performance in Fabry-Perot (FP) cavity lasers, which are limited by the lack of wavelength selection mechanisms and multiple output spectra wavelengths. These limitations hinder the application of QD lasers in optical communication.


Researchers at the University of California, Santa Barbara, have successfully introduced the performance benefits of QD lasers to distributed feedback (DFB) lasers, distributed Bragg reflector (DBR) lasers and photonic integrated circuits (PIC). This technology optimizes the epitaxial layer design, material growth, and fabrication process to implement quantum dots as the laser active material for DFB and DBR lasers and PICs. These lasers achieve superior performance over QW lasers, producing narrow linewidths and having high operating and characteristic temperatures. This invention also enables robust and high volume manufacturing using industry standard crystal growth techniques.


  • High operating and characteristic temperatures
  • Decreased linewidth enhancement factor enabling a narrow linewidth output 
  • High volume manufacturing using standard crystal growth and fabrication techniques


  • Lasers
    • DFB lasers
    • DBR lasers
  • Photonic integrated circuits (PICs)

Patent Status

Patent Pending


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  • Klamkin, Jonathan
  • Wang, Lei

Other Information


quantum dot, QD, laser, laser diodes, LD, InGaAs, InAs, gallium, quantum well, crystal growth, optical communication, DFB lasers, DBR lasers, Photonic integrated circuits

Categorized As