3D Hole Injectors for InAlGaN Light-Emitting Diodes
Tech ID: 31879 / UC Case 2020-060-0
InGaN LEDs suffer from efficiency loss at high injection levels; commonly known as the “droop”. V-shaped defects provide a solution in principle, but they do not demonstrate a significant reduction of local carrier densities and do not strongly affect the droop. Furthermore, conventional LED designs incorporate multiple quantum well active regions where hole injection is vertically inhomogeneous, causing only the top quantum wells to be populated by holes thus restricting improvement of the droop.
Researchers at the University of California, Santa Barbara have employed rectangular, pyramidal or triangular ridge injectors to introduce hole injection homogeneity and minimize efficiency droop by ensuring lateral and vertical hole injection. This technology can be implemented with standard industrial MOCVD, and can be applied to all wavelength LEDs and lasers. It can also obtain ultraviolet to infrared LEDs for high-power applications, and is even implementable in white LED fabrication.
- Increases LED efficiency
- Reduces carrier density
- Applicable to all wavelength LEDs and lasers