In-Situ Methods Of Preventing Interfacial Impurities And Dry Etch-Induced Damage In Regrown III-Nitride Structures
Tech ID: 31874 / UC Case 2020-069-0
III-Nitride devices with complex geometries are largely susceptible to interfacial impurities and dry etch-induced damage that significantly reduce the device’s performance. Fully realizing the benefits of III-nitride materials in optoelectronic and power electronic applications will require a controllable and industrially-viable method for treating these defects.
Researchers at the University of California, Santa Barbara have addressed these performance-hindering defects by depositing a capping layer on III-nitride films in-situ in the same manner as III-As capping methods, which protects the III-N surface from ambient impurities by creating an In(Ga, Al)N protection layer. This novel design significantly improves the performance of electronic and optoelectronic III-nitride devices with complex geometries. It also offers more control compared to other ex-situ methods and can be implemented with no special equipment. Additionally, this technology provides a viable path toward selective-area doping for devices such as junction field-effect transistors (JFETs) and current-aperture vertical electron transistors (CAVETs), without the need for complicated processes such as ion-implantation and related activation processes.
- Increases performance of III-Nitride devices
- Increases control of impurity removal
- Accommodates complex geometries
- Implementable without special equipment
- Laser Diodes
- Power Electronics