Edge-Emitting Laser Diode with Via-Activated Tunnel Junction Contact

Tech ID: 31863 / UC Case 2019-966-0


P-GaN demonstrates poor bulk conductivity and high specific contact resistivity as a result of its thickness. In principle, reducing thickness significantly reduces the operating voltage of p-GaN, but in doing so there will be an increase in the modal loss of the laser and a requirement for a metal or TCO-to-p-GaN contact will be introduced.


Researchers at the University of California, Santa Barbara have created a novel InGaN quantum well edge-emitting laser diode with a via-activated tunnel junction p-contact that achieves higher conductivity without increased modal loss or an additional TCO contact. The device uses an MOCVD-grown tunnel junction contact for the p-side, consisting of a p++ GaN layer, an n- GaN layer and an n+ GaN contact layer. Vias are formed in the top n-type GaN layers through dry etching or by using a SiO2 mask and selective area regrowth. The p and p++ GaN layers are activated through these layers by thermal anneal. This affords the reduced p-GaN thickness (below 250 nm) and eliminates the need for a metal or TCO-to-p-GaN contact. The device can be grown completely by MOCVD.


  • Increases conductivity
  • Reduces p-GaN thickness
  • Eliminates need for metal TCO-to-p-GaN contact
  • Highly implementable with MOCVD


  • Laser Diodes

Patent Status

Patent Pending


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Other Information


laser diode, tunnel junction, edge emitting, InGaN, MOCVD

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