Near-Infrared, Flip-Chip, TCO-Clad, InGaN Quantum Dot Laser Diode

Tech ID: 31862 / UC Case 2019-963-0

Background

Conventional telecommunication laser diodes utilize shorter wavelengths that result in limited temperature performance. Typical systems also employ a quantum well in narrower bandgap material systems that are susceptible to both internal quantum deficiencies in defective materials and defects through the active region because their emitters are not localized. 

Description

Researchers at the University of California, Santa Barbara have fabricated a device with a long wavelength (850-1550nm) emission using InGaN quantum dots. Due to the temperature sensitivity of InN, the epitaxial structure is grown in reverse as compared to conventional devices; starting with p-contact layers, p-GaN, and AlGaN electron-blocking layer (EBL) — all at high temperatures. The quantum dot layer, barrier layers, and n-GaN are subsequently grown at a low temperature under 700C. This device provides telecommunication wavelengths using a III-nitride system with enhanced temperature performance, and the localized nature of the emitters reduces this device’s sensitivity to defects and threading dislocations. 

Advantages

  • Increased temperature performance
  • Increased internal quantum efficiencies
  • Reduced sensitivity to defection

Applications

  • Laser Diodes

Patent Status

Patent Pending

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Other Information

Keywords

laser diode, InGaN, telecommunication

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