III-Nitride VCSEL with a High Indium Content Active Region
Tech ID: 31860 / UC Case 2019-935-0
New applications for vertical-cavity surface-emitting lasers (VCSELs) demand longer transmission distances, free-space transmission and wavelength-division multiplexing. VCSELs must emit long wavelengths in order to meet these needs. Current solutions suffer from thermal instability and impose limitations on high-powered 2D arrays. A III-nitride system would eliminate these obstacles, but the lattice mismatch and disparate growing conditions between GaN and InN have previously kept this solution out of reach.
Researchers at the University of California, Santa Barbara have created a novel III-nitride VCSEL with an epitaxially grown active region of high Indium content dots or stripes originating from coalesced quantum dots. This allows for long wavelength emission while circumventing the lattice mismatch by relaxing the strain through island growth and growing under lower temperatures. The use of InN quantum dots provides superior thermal stability and increases the gain through reduced dimensionality of the active layer.
- Long wavelength emission
- Improved thermal stability
- High processing yield
- Increased gain
- No lattice mismatch