High Speed Indium Gallium Nitride Multi-Quantum Well (InGaN MQW) Photodetector

Tech ID: 30186 / UC Case 2019-179-0

Brief Description

A way to increase the bandwidth of InGaN MQW photodetectors to make them compatible with high-speed VLC links.

Background

Over the past few years, visible light communication (VLC) technology has become well known as an alternative wireless communication technology, with great potential when paired with InGaN based photodetectors. However, the speed performance of InGaN based photodetectors is not fast enough for the optical receivers in VLC links. Researchers have turned their focus towards InGaN photodetectors with multi-quantum-well (MQW) structures in order to avoid issues with epitaxy of thick InGaN layers, but current studies pay little attention to the speed-performance of devices using these structures. 

Description

Researchers at the University of California, Santa Barbara have found a way to increase the bandwidth of InGaN MQW photodetectors to make them compatible with high-speed VLC links. The invention shows how implementing thin quantum barriers in the MQW structure stops carrier escape, improves the bandwidth of InGaN MQW photodetectors, and offers an alternative way to create wide bandgap semiconductors without the difficult process of growing thick InGaN layers.

Advantages

  • Increased bandwidth
  • Alternative solution to difficult growth of thick semiconductor layers
  • Compatible with VLC links and prior bandgap semiconductor infrastructure
  • Low development cost

Applications

  • Wide bandgap semiconductors
  • Optoelectronics
  • High-power electronics
  • Vehicular communication
  • Underwater communication
  • Indoor positioning systems

Patent Status

Patent Pending

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Other Information

Keywords

indfeat, indbulk, SSLEEC, Bandwidth, Photodetectors, Visible light communication, Wide bandgap semiconductors, Multi-Quantum Well

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