A way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates.
Photoelectrochemical (PEC) wet etching is used in the solid-state lighting and light-emitting device (LED) industries to roughen III-nitride device light outcoupling surfaces in order to enhance light extraction efficiency. However, the current PEC etch technique is not suitable for small devices because faceting on the nitrogen-polar c-plane generates roughness with length scales on the order of the device sizes themselves, removing large portions of the device material, which severely degrades performance and often renders small LED devices inactive.
Researchers at the University of California, Santa Barbara have developed a way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates. This method is achieved by using carefully controlled PEC etching parameters to slow etch rates in specific crystallographic directions during selective etching of sacrificial device layers. It allows for individual LEDs and other devices to assemble and integrate into displays and other optoelectronic systems.
LED, light-emitting diode, laser diode, III-Nitride, Photoelectrochemical (PEC) Wet Etching, Optoelectronic systems, indfeat, indled