Control Of Photoelectrochemical Etch Parameters For Minimization of Interfacial Roughness of Light Emitting Device Structures

Tech ID: 30147 / UC Case 2019-392-0

Brief Description

A way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates.

Background

Photoelectrochemical (PEC) wet etching is used in the solid-state lighting and light-emitting device (LED) industries to roughen III-nitride device light outcoupling surfaces in order to enhance light extraction efficiency. However, the current PEC etch technique is not suitable for small devices because faceting on the nitrogen-polar c-plane generates roughness with length scales on the order of the device sizes themselves, removing large portions of the device material, which severely degrades performance and often renders small LED devices inactive.  

Description

Researchers at the University of California, Santa Barbara have developed a way to separate micron/sub-micron scale, c-plane LEDs and other devices from their growth substrates. This method is achieved by using carefully controlled PEC etching parameters to slow etch rates in specific crystallographic directions during selective etching of sacrificial device layers. It allows for individual LEDs and other devices to assemble and integrate into displays and other optoelectronic systems.

Advantages

  • Enables uniform and faster etching
  • Scalable and efficient separation of device from their growth substrates
  • Smooth device interfaces

Applications

  •  LEDs
  •  Optoelectronic Devices

Patent Status

Patent Pending

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Inventors

  • Chan, Lesley W.
  • DenBaars, Steven P.
  • Gordon, Michael
  • Hwang, David
  • Karmstrand, Therese
  • Margalith, Tal
  • Shapturenka, Pavel

Other Information

Keywords

LED, light-emitting diode, laser diode, III-Nitride, Photoelectrochemical (PEC) Wet Etching, Optoelectronic systems, indfeat, indled

Categorized As

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