A technique for making relaxed InGaN layers without crystal defects.
operation range of (Al,Ga,In)N devices into the green, yellow, and red range of
the electromagnetic spectrum is complicated by an extremely large lattice
mismatch when GaN is considered as the substrate. Growing thick InGaN leayers
by hydride vapor phase epitaxy is complicated and growing thick compositionally graded InGaN
layers on GaN base layers still produces crystal defects that hinder use in
many device applications. Therefore, a method is needed for growing relaxed
InGaN layers without imperfections and limitations.
Researchers at the University of California, Santa Barbara discovered a way to make relaxed InGaN layers without crystal defects. With the elimination of crystal defects, this process makes it possible for the InGaN layers to act as base layers for high functioning long wavelength light emitting devices, solar cells, or strain-engineered transistors, to name a few.
|Patent Cooperation Treaty||Published Application||WO2021050731||03/18/2021||2019-178|