Fabrication of Relaxed Semiconductor Films without Crystal Defects

Tech ID: 30144 / UC Case 2019-178-0

Brief Description

A technique for making relaxed InGaN layers without crystal defects.


Expanding the operation range of (Al,Ga,In)N devices into the green, yellow, and red range of the electromagnetic spectrum is complicated by an extremely large lattice mismatch when GaN is considered as the substrate. Growing thick InGaN leayers by hydride vapor phase epitaxy is complicated and  growing thick compositionally graded InGaN layers on GaN base layers still produces crystal defects that hinder use in many device applications. Therefore, a method is needed for growing relaxed InGaN layers without imperfections and limitations.


Researchers at the University of California, Santa Barbara discovered a way to make relaxed InGaN layers without crystal defects. With the elimination of crystal defects, this process makes it possible for the InGaN layers to act as base layers for high functioning long wavelength light emitting devices, solar cells, or strain-engineered transistors, to name a few.


  • Elimination of crystal defects
  • Higher function
  • Longer wavelength


  • III-N electronic devices
  • Semiconductors
  • Fabrication of microLEDs

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Published Application WO2021050731 03/18/2021 2019-178

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Other Information


InGaN Layers, Semiconductor Films, LED, Light Emitting Diode, indfeat

Categorized As