Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures

Tech ID: 30116 / UC Case 2019-395-0

Brief Description

An alternative method, using wafer bonding, to connect relaxed nanostructures in the active region with separately grown material.


Relaxed active areas are advantageous for semiconductor device systems that experience high lattice mismatch in epitaxial growth. Current approaches to using relaxed active areas in III-V materials for LEDs and laser diodes consist of material growth over relaxed material. However, this method reduces the device’s performance because it deteriorates the crystal quality of the device’s other components.


Researchers at the University of California, Santa Barbara have developed an alternative method using wafer bonding to connect relaxed nanostructures in the active region with separately grown material. The nanostructures act as the contact points for the two wafers bonding and do not need to be planar, unlike conventional wafer bonding techniques. This unique process produces greater device performance and higher quality device materials by utilizing relaxed active areas.


  • Enhanced device performance
  • Improved material quality
  • Wafer bonding technique is already commercially viable


  • Semiconductor device systems
  • III-V materials for LEDs
  • Laser diodes for long wavelength emissions

Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Reference for National Filings WO2020150482 07/23/2020 2019-395

Patent Pending


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Other Information


indfeat, indled, wafer bonding, nanostructures, semiconductors, LEDs, light-emitting diodes

Categorized As

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