Efficient Implementation of a Tunnel Junction Contact on a Nitride-Based Edge-Emitting Laser Diode

Tech ID: 30113 / UC Case 2019-175-0

Brief Description

An edge-emitting laser diode that leverages the design space uniquely using a tunnel junction contact to improve laser diode performance.

Background

Previously published laser diodes with tunnel junction contacts or transparent conducting oxide (TCO) contacts have relatively higher internal optical absorption in an edge-emitting laser diode, which make them less efficient and require higher operating voltage. Methods to reduce internal absorption would enhance the performance of laser diodes.

Description

Researchers at the University of California, Santa Barbara have developed an edge-emitting laser diode that leverages the design space uniquely using a tunnel junction contact to improve laser diode performance. This design significantly reduces the internal optical absorption in an edge-emitting laser diode, per computational simulations, and improves the operating voltages of laser diodes with tunnel junction contacts. This laser diode is significantly more efficient with a gain of at least 22%.

Advantages

  • Reduced operating voltage and unwanted absorption in the laser diode
  • Increased efficiency (gain is at least 22% higher)
  • Increased thermal performance

Applications

  •  Laser Diodes
  •  Edge-Emitting Diodes

Patent Status

Patent Pending

Contact

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Inventors

  • Hamdy, Kareem
  • Nakamura, Shuji
  • Speck, James S.

Other Information

Keywords

indled, indfeat, LED, Light-Emitting Diode, Laser Diode, Edge-Emitting Diodes

Categorized As

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