A way to reproduce micron and submicron scale III-nitride LEDs and/or devices and remove them from growth substrates.
In order for current near eye display technologies to improve, efficient micro and nanoscale pixels for light-emitting diodes (LEDs) and/or devices are required. This is possible with more efficient III-nitride materials. However, the industry still struggles with manufacturing and handling sub-micron scale InGaN/GaN structures that emit at different wavelengths. Additionally, flexible and curved display applications need substrate thinning along with techniques to detach individual LED devices from their growth substrates or use of pick-and-place to position LEDs or devices onto alternate substrates.
Researchers at the University of California, Santa Barbara have designed a way to reproduce micron and sub-micron scale III-nitride LEDs and/or devices and remove them from growth substrates. This is done through selective photoelectrochemical etching of a sacrificial layer that is fixed between the active emitting layer and the growth substrate. This is a cost-effective and scalable method of fabricating next generation small LED and device displays.
indfeat, indled, LED, Laser Diodes, nanoLED, Etching, Lighting, Display