Multifaceted III-Nitride Surface-Emitting Laser
Brief Description
Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.
Background
Various light sources have been developed for use in fluorescent sensors, such as LEDs, xenon arc lamps, mercury-vapor lamps, halogen bulbs, and lasers. Aside from the lasers, these light sources require filters and other optical modulators to obtain the desired wavelength in a small enough spot size for probing. On the other hand, lasers provide coherent and relatively small spot size light sources with narrow spectral widths which may not require the additional elements. Vertical cavity surface emitting lasers (VCSELs) have a number of qualities that make them desirable: circular beam profile, small spot size, low threshold current, and 2D array capabilities. A VCSEL can be positioned such that the light output illuminates a certain portion of the sample. New technology is continuing to improve VCSELS.
Description
Researchers at the University of California, Santa Barbara improved laser capability by using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample. The incident beams are absorbed by the sample, which fluoresces, and the remaining VCSEL light is filtered out before a detector. The circular beam profile allows for focusing of the beam to even smaller spot sizes, potentially increasing resolution. Applications include, but are not limited to, optogenetic biosensors. This technology also enables stimulation of multiple points of a sample via a VCSEL array. The surface emitting lasers have low threshold currents, which means that the array could be battery powered, making them easier to transport.
Advantages
- Small Circular Spot size
- Stimulation of multiple points of a sample via VCSEL array
- Low threshold currents for battery power
Applications
- Optogenetic biosensors
- Medical technology
- Navigation
- Security
- Automobiles
- 3D Imaging
Patent Status
| Country | Type | Number | Dated | Case |
| Patent Cooperation Treaty | Reference for National Filings | WO2019164560 | 11/07/2019 | 2018-253 |
Patent Pending
Contact
- Sherylle Mills Englander
- englander@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- Cohen, Daniel A.
- Forman, Charles A.
- Kearns, Jared A.
- Kosik, Kenneth S.
- Nakamura, Shuji
Other Information
Keywords
indfeat, indled, III-Nitride Devices, Laser Diodes, LED, VCSEL, Battery Power
Additional Technologies by these Inventors
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Low-Density LRP1 As A Regulator of Tau Protein Spread
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Phosphor-Free White Light Source
- Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Transparent Mirrorless (TML) LEDs
- Improved GaN Substrates Prepared with Ammonothermal Growth
- Laser Diode With Tunnel Junction Contact Surface Grating
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Deep Ultraviolet Laser Pumped by Trap-Assisted Two Photon Absorption
- Method for Enhancing Growth of Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
- Nonpolar III-Nitride LEDs With Long Wavelength Emission
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- Method for Growing High-Quality Group III-Nitride Crystals
- Incorporating Temperature-Sensitive Layers in III-N Devices
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
- (Al, In,Ga, B)N Device Structures
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Contact Architectures for Tunnel Junction Devices
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Precise Neural Circuit Probe with Reversible Functionality
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
- Tunable White Light Based on Polarization-Sensitive LEDs
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Growth of High-Performance M-plane GaN Optical Devices
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- High Light Extraction Efficiency III-Nitride LED
- III-V Nitride Device Structures on Patterned Substrates
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Method for Increasing GaN Substrate Area in Nitride Devices
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Improved Manufacturing of Semiconductor Lasers
- LED Device Structures with Minimized Light Re-Absorption
- Growth of Planar Semi-Polar Gallium Nitride
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- III-Nitride Based VCSEL with Curved Mirror on P-Side of the Aperture
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
