Multifaceted III-Nitride Surface-Emitting Laser
Brief Description
Improved laser capability using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample.
Background
Various light sources have been developed for use in fluorescent sensors, such as LEDs, xenon arc lamps, mercury-vapor lamps, halogen bulbs, and lasers. Aside from the lasers, these light sources require filters and other optical modulators to obtain the desired wavelength in a small enough spot size for probing. On the other hand, lasers provide coherent and relatively small spot size light sources with narrow spectral widths which may not require the additional elements. Vertical cavity surface emitting lasers (VCSELs) have a number of qualities that make them desirable: circular beam profile, small spot size, low threshold current, and 2D array capabilities. A VCSEL can be positioned such that the light output illuminates a certain portion of the sample. New technology is continuing to improve VCSELS.
Description
Researchers at the University of California, Santa Barbara improved laser capability by using III-Nitride VCSELs as the illumination source for sensing applications of a fluorescent sample. The incident beams are absorbed by the sample, which fluoresces, and the remaining VCSEL light is filtered out before a detector. The circular beam profile allows for focusing of the beam to even smaller spot sizes, potentially increasing resolution. Applications include, but are not limited to, optogenetic biosensors. This technology also enables stimulation of multiple points of a sample via a VCSEL array. The surface emitting lasers have low threshold currents, which means that the array could be battery powered, making them easier to transport.
Advantages
- Small Circular Spot size
- Stimulation of multiple points of a sample via VCSEL array
- Low threshold currents for battery power
Applications
- Optogenetic biosensors
- Medical technology
- Navigation
- Security
- Automobiles
- 3D Imaging
Patent Status
| Country | Type | Number | Dated | Case |
| Patent Cooperation Treaty | Published Application | WO2019164560 | 11/07/2019 | 2018-253 |
Contact
- Sherylle Mills Englander
- englander@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- Cohen, Daniel A.
- Forman, Charles A.
- Kearns, Jared A.
- Kosik, Kenneth S.
- Nakamura, Shuji
Other Information
Keywords
indfeat, indled, III-Nitride Devices, Laser Diodes, LED, VCSEL, Battery Power
Additional Technologies by these Inventors
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Improved Manufacturing of Semiconductor Lasers
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Method for Growing High-Quality Group III-Nitride Crystals
- Growth of Planar Semi-Polar Gallium Nitride
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
- Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
- Phosphor-Free White Light Source
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- LED Device Structures with Minimized Light Re-Absorption
- III-V Nitride Device Structures on Patterned Substrates
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- Improved GaN Substrates Prepared with Ammonothermal Growth
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Nonpolar III-Nitride LEDs With Long Wavelength Emission
- Method for Increasing GaN Substrate Area in Nitride Devices
- Precise Neural Circuit Probe with Reversible Functionality
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Performance M-plane GaN Optical Devices
- Method for Enhancing Growth of Semipolar Nitride Devices
- Transparent Mirrorless (TML) LEDs
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- High Light Extraction Efficiency III-Nitride LED
- Tunable White Light Based on Polarization-Sensitive LEDs
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Contact Architectures for Tunnel Junction Devices
- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
- Distributed Feedback Laser with Transparent Conducting Oxide Grating
- Retaining Injection Efficiency and Optical Properties of Laser Diodes with Built-in Polarization Fields
- Laser Diode With Tunnel Junction Contact Surface Grating
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
