A Structure For Increasing Mobility In A High-Electron-Mobility Transistor

Tech ID: 27402 / UC Case 2017-462-0

Brief Description

A technique that results in a significant increase of electron mobility and sheet charge density at small channel thickness.

Background

HEMTs are solid-state electron devices made from a semiconductor heterostructure used to amplify high-frequency signals. Electron mobility is important to device performance and so it is extremely desirable to discover ways to improve electron mobility.

Description

 

Researchers at the University of California, Santa Barbara have created a channel structure for semiconductor high-electron mobility transistors (HEMTs) that results in a significant increase of electron mobility and sheet charge density at small channel thickness. This enables the fabrication of devices with increased high frequency power performance and allows for better lateral and vertical scalability.

 

Advantages

  • Increased electron mobility
  • Improved device performance (94 GHz)

 

Applications

  • High-electron mobility transistors
  • Power electronics


Patent Status

Country Type Number Dated Case
Patent Cooperation Treaty Reference for National Filings WO2018094046 05/24/2018 2017-462
 

Patent Pending

Contact

Learn About UC TechAlerts - Save Searches and receive new technology matches

Inventors

Other Information

Keywords

Semiconductor, Transistor, High Electron Mobility, HEMT, indfeat, indpowerelec

Categorized As