A technique that results in a significant increase of electron mobility and sheet charge density at small channel thickness.
HEMTs are solid-state electron devices made from a semiconductor heterostructure used to amplify high-frequency signals. Electron mobility is important to device performance and so it is extremely desirable to discover ways to improve electron mobility.
|Patent Cooperation Treaty||Reference for National Filings||WO2018094046||05/24/2018||2017-462|
Semiconductor, Transistor, High Electron Mobility, HEMT, indfeat, indpowerelec