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Tech ID: 27393
Additional Technologies by these Inventors
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Growth of Planar Semi-Polar Gallium Nitride
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- High Efficiency LED with Optimized Photonic Crystal Extractor
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- LED Device Structures with Minimized Light Re-Absorption
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Oxyfluoride Phosphors for Use in White Light LEDs
- III-V Nitride Device Structures on Patterned Substrates
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Method for Increasing GaN Substrate Area in Nitride Devices
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Performance M-plane GaN Optical Devices
- Method for Enhancing Growth of Semipolar Nitride Devices
- Transparent Mirrorless (TML) LEDs
- Solid Solution Phosphors for Use in Solid State White Lighting Applications
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- High Light Extraction Efficiency III-Nitride LED
- Tunable White Light Based on Polarization-Sensitive LEDs
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Increased Light Extraction with Multistep Deposition of ZnO on GaN
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting
- Contact Architectures for Tunnel Junction Devices
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Single-Phase Full-Color Phosphor for LEDs
- Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Continuous Fluidic Printing Of MicroLEDs
- Creating and Releasing Nanoscale Light Emitting Devices from Their Growth Substrates
- Colloidal Lithography-Enabled Creation of Metasurface-Integrated MicroLEDs and Devices
- Unidirectional Photoluminescence with Gan/Ingan Quantum Well Metersurfaces
- Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures
- Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
- Enhancement of Semi-Polar Gallium Nitride Surface Morphology in Photo-Electrochemical Undercut Etching
- Transparent Vertical Cavity Surface Emitting Laser for Augmented and Mixed Reality Displays
- Control Of Photoelectrochemical Etch Parameters For Minimization of Interfacial Roughness of Light Emitting Device Structures
