Unipolar Light Emitting Devices On Silicon Based Substrates

Tech ID: 27263 / UC Case 2017-045-0

Brief Description

A process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates.

Background

Currently light emitting materials are grown on lattice matched native III-V substrates. This process is undesirable as it is expensive and the thermal conductivity of the substrate is low. An alternative process is growing the light emitting material on large area silicon substrates. III-V substrates are expensive, toxic and naturally brittle whereas the silicon substrates are an order of magnitude cheaper, nontoxic and have excellent mechanical durability.

Description

Researchers at the University of California, Santa Barbara have developed a process that provides a less expensive alternative for growing light emitting material compared to growing on lattice matched native III-V substrates. Growing on large area silicon substrates reduces the substrate cost for III-V Quantum Cascade Lasers. The significantly higher thermal conductivity of the silicon substrates provides improved heat dissipation (2-4 times more efficient). The process improves both performance and reliability while simultaneously lowering cost of manufacturing unipolar light emitters, such as Quantum Cascade Lasers.

Advantages

  • Order of magnitude cheaper
  • Non-Toxic
  • Excellent Mechanical durability
  • 2-4 times more efficient in conducting heat

Applications

  • Remote gas sensing in industrial exhaust systems
  • Breath Analysis in medical diagnostics
  • Heat seeking missile countermeasures for military

Patent Status

Patent Pending

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Other Information

Keywords

Silicon substrates, Quantum cascade lasers, Light emitting devices, indfeat, indled

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