Terahertz (THz) Interconnect Semiconductor with High Energy and Bandwidth Density

Tech ID: 25938 / UC Case 2014-997-0

Abstract

Researchers at the University of California, Davis have developed a sub-THz interconnect semiconductor that can operate at high bandwidth densities and high-energy efficiencies.

Full Description

Continuous scaling of semiconductors allows for more cores and integrated functionalities into a single chip while simultaneously supporting higher processing speeds. This scaling has caused ever increasing inter- and intra- chip communication bandwidth, thus spurring active interconnect development. It has been a challenge, however, for both electrical and optical interconnect elements to address interconnect issues alone.

Researchers at the University of California, Davis have developed a unique terahertz interconnect semiconductor. Using planar silicon process-compatible channels and couplers that utilize both electrical and optical pathways, the interconnect semiconductor achieves high-energy efficiencies and bandwidth densities. The unique THz spectrum position between the microwave and optical frequencies enables this design to leverage the advantages of both electronic and optical approaches to address interconnect issues.

Applications

  • Semiconductor based technologies

Features/Benefits

  • Low costs and high reliability
  • Compatibility with mainstream semiconductor technologies
  • High bandwidth
  • High bandwidth density
  • Ultra-high carrier frequency and small channel size

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 9,978,676 05/22/2018 2014-997
 

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Inventors

  • Gu, Qun
  • Liu, Xiaoguang
  • Luhmann, Neville C.
  • Yu, Bo

Other Information

Keywords

interconnect, terahertz, inter-chip communication, intra-chip communication, energy efficiency

Categorized As