Researchers at the University of California, Davis have developed a sub-THz interconnect semiconductor that can operate at high bandwidth densities and high-energy efficiencies.
Continuous scaling of semiconductors allows for more cores and integrated functionalities into a single chip while simultaneously supporting higher processing speeds. This scaling has caused ever increasing inter- and intra- chip communication bandwidth, thus spurring active interconnect development. It has been a challenge, however, for both electrical and optical interconnect elements to address interconnect issues alone.
Researchers at the University of California, Davis have developed a unique terahertz interconnect semiconductor. Using planar silicon process-compatible channels and couplers that utilize both electrical and optical pathways, the interconnect semiconductor achieves high-energy efficiencies and bandwidth densities. The unique THz spectrum position between the microwave and optical frequencies enables this design to leverage the advantages of both electronic and optical approaches to address interconnect issues.
|United States Of America||Issued Patent||9,978,676||05/22/2018||2014-997|
interconnect, terahertz, inter-chip communication, intra-chip communication, energy efficiency