A method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface.
The usefulness of gallium nitride (GaN) and its ternary and quaternary compounds incorporating aluminum and indium has been well established for fabrication of visible and ultraviolet optoelectronic devices. Current nitride technology for these devices uses nitride films grown along the polar c-direction; however, quantum-well active regions in devices suffer from the quantum-confined Stark effect (QCSE). One way to combat the issue is to grow films on semipolar planes of GaN in order to improve device performance by reduce polarization effects and increasing the efficiency of optical transitions.
Researchers at UC Santa Barbara have developed a method to grow semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices on suitable substrates or planar templates in which a large area of the semipolar film is parallel to the substrate surface. The method uses vapor phase epitaxy, such as metalorganic chemical vapor deposition (MOCVD), in order to grow the semipolar structures. Additionally, this technique alters the crystal growth orientation in order to reduce polarization effects in nitride thin films. This method is stable, energy efficient and cost-effective.
|United States Of America||Issued Patent||9,793,435||10/17/2017||2005-668|
|United States Of America||Issued Patent||9,231,376||01/05/2016||2005-668|
|United States Of America||Issued Patent||8,686,466||04/01/2014||2005-668|
|United States Of America||Issued Patent||7,846,757||12/07/2010||2005-668|
|United States Of America||Published Application||20180013035||01/11/2018||2005-668|
indssl, indled, MOCVD, thin films