Epitaxial Growth of Single Crystalline MgO on Germanium
Tech ID: 24617 / UC Case 2010-244-0
Professor Wang and colleagues have demonstrated epitaxial growth of magnesium oxide on Germanium (Ge) with single crystalline order and atomically smooth morphology. One application of the MgO/Ge interface is use in a Ge-based Metal-oxide-semiconductor field-effect transistor (MOSFET) to amplify or switch electronic signals. Another application of this technology would utilize the ferromagnetic metal/MgO/Ge tunnel junction to realize efficient spin injection from ferromagnetic metals into Ge.
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