Epitaxial Growth of Single Crystalline MgO on Germanium

Tech ID: 24617 / UC Case 2010-244-0

Innovation

Professor Wang and colleagues have demonstrated epitaxial growth of magnesium oxide on Germanium (Ge) with single crystalline order and atomically smooth morphology. One application of the MgO/Ge interface is use in a Ge-based Metal-oxide-semiconductor field-effect transistor (MOSFET) to amplify or switch electronic signals. Another application of this technology would utilize the ferromagnetic metal/MgO/Ge tunnel junction to realize efficient spin injection from ferromagnetic metals into Ge. 

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,766,341 07/01/2014 2010-244
 

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Inventors

  • Wang, Kang L.

Other Information

Keywords

Magnesium oxide, MOSFET, metal oxide semiconductor transistor, spin injection

Categorized As