Method for Growing Self-Assembled Quantum Dot Lattices

Tech ID: 24608 / UC Case 2000-483-0

Brief Description

A method of producing controllable quantum dot lattices. 


Self-assembled quantum dots (QDs) have been the subject of great interest due to their attractive electronic and optical properties. In addition, QD structures and physical properties have been explored in a range of novel device applications. Quantum dot structures have the ability to exhibit very different characteristics if they are ordered in a QD lattice, rather than in the random arrays that previous tests have looked at. An ordered QD lattice should exhibit novel properties, including long-range order and a controllable structure. However, this controllable QD lattice has yet to be achieved, limiting the ability of QD incorporation in device applications.


Researchers at the University of California, Santa Barbara have developed a method of producing controllable quantum dot lattices. These lattices can be varied in their dimensions, as well as the orientation of the unit cell. These strain-engineered, self-assembled semiconductor QDs are first ordered into two-dimensional lattices, and can be replicated in repeated intervals in order to grow three-dimensional lattices. The unit cell dimensions, orientation, and total number of QDs contained in the lattice can be manipulated. This growth method allows for a far greater degree of manipulation of QDs for device applications.  


  • Can be used with a 2D or 3D lattice
  • Works with other crystal orientations
  • Can be used as an all in situ technique after patterning


  • Molecular beam epitaxy
  • Metal organic chemical vapor deposition
  • Semiconductor systems, such as SiGe, GaAl, and GaN
  • Metal semiconductor systems, such as Fe/GaAs and Co/GaAs

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 6,583,436 06/24/2003 2000-483


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Other Information


quantum dots, lattice, semiconductor

Categorized As

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