Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
Tech ID: 23890 / UC Case 2014-416-0
Brief Description
A novel device structure for III-nitride devices grown on non-polar or semipolar planes.
Background
The usefulness of III-nitrides has been well established for fabrication of visible and ultraviolet optoelectronic devices and high power electronic devices. Growing these devices on nonpolar or semipolar planes of the crystal is a popular solution for reducing the polarization effects. One of the challenges of nonpolar and semipolar growth is that when green III-nitride LEDs and LDs are grown with active regions with high indium contents, the active region can form extended defects and can easily be degraded by subsequent high temperature growth steps. This degradation is due to the growth of the p-type layers after the growth of the active region, which uses high temperatures and impedes device performance.
Description
A novel device structure has been developed for III-nitride devices grown on non-polar or semipolar planes that does not involve the growth of p-type layers after the active region. This configuration reduces the defects and device degradation common in III-nitride LEDs and LDs grown on semipolar planes, and has the potential for creating green III-nitride LEDs and LDs with improved performance and higher wall-plug efficiency.
Advantages
· Reduced contact resistance, absorption loss, and spreading resistance in p-GaN devices
· Decreased operating voltage of LEDs and LDs leads to increased wall-plug efficiency
· Reduced thermal losses from resistive p-GaN layers
Applications
· Light emitting diodes (LEDs)
· Laser diodes (LDs)
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 10,186,835 | 01/22/2019 | 2014-416 |
Contact
- University of California, Santa Barbara Office of Technology & Industry Alliances
- dobis@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- Farrell, Robert M.
- Nakamura, Shuji
- Weisbuch, Claude C.
Other Information
Keywords
indLED, semipolar plane, light emitting diode, laser diode, III-nitride, cenIEE, indssl, indfeat
Additional Technologies by these Inventors
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation
- III-Nitride-Based Devices Grown With Relaxed Active Region
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Transparent Mirrorless (TML) LEDs
- Improved GaN Substrates Prepared with Ammonothermal Growth
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- Size-Independent Forward Voltage Micro-LED with an Epitaxial Junction
- Method for Enhancing Growth of Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
- Nonpolar III-Nitride LEDs With Long Wavelength Emission
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- Method for Growing High-Quality Group III-Nitride Crystals
- Controlled Photoelectrochemical (PEC) Etching by Modification of Local Electrochemical Potential of Semiconductor Structure
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Highly Compact, High-Index Dielectric Nanostructures for Deep-Ultraviolet Devices
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Contact Architectures for Tunnel Junction Devices
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- III-Nitride-Based Devices Grown On Thin Template On Thermally Decomposed Material
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- High Efficiency III-Nitride Devices with Smooth Relaxed InGaN Buffer and Strain Compliant Template
- Tunable White Light Based on Polarization-Sensitive LEDs
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Growth of High-Performance M-plane GaN Optical Devices
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- High Light Extraction Efficiency III-Nitride LED
- III-V Nitride Device Structures on Patterned Substrates
- Activation of P-Type Layers of Tunnel Junctions in Micro-LEDs
- Method for Increasing GaN Substrate Area in Nitride Devices
- Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- LED Device Structures with Minimized Light Re-Absorption
- Growth of Planar Semi-Polar Gallium Nitride
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- III-Nitride Based VCSEL with Curved Mirror on P-Side of the Aperture
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
