Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation

Tech ID: 23654 / UC Case 2008-323-0

Brief Description

A novel technique of improving performance in nonpolar LEDs by obtain high polarization ratios.

Background

In recent years, III-V nitride-based blue and green LEDs have begun to emerge in general lighting and full color display applications. Internal electrical polarization is a unique property of the (Al,In,Ga)N system. Since atoms in the III-V nitride system do not maintain their ideal positions, this polarization field almost always exists along the c-axis, making the c-plane a polar plane. In contrast, III-V nitride-based LEDs conventionally grown on the c-plane show negligible light polarization.

 

Description

Researchers at the University of California, Santa Barbara have developed a novel technique to obtain high polarization ratios from nonpolar LEDs, thereby improving performance. The present invention accomplishes higher polarization ratios in electroluminescence from nonpolar LEDs by increasing the indium content in light-emitting layers. A possible modification of this invention is to introduce strain controlling layers in the LED structure, which results in increased polarization ratios. The present invention requires no extra process in material growths, clean room processing, or device packaging.

 

Advantages

  • Higher polarization ratios in nonpolar LEDs
  • No additional manufacturing steps necessary
  • Size and energy efficient backlighting


Applications

  • Backlighting for liquid crystal displays (LCDs)
  • Other lighting applications


Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,044,417 10/25/2011 2008-323
 

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Keywords

indssl, indled, LEDs

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